unisonic technologies co., ltd ud4606z preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-763.a dual enhancement mode (n-channel/p-channel) ? description the utc ud4606z is a dual enhancement mode power mosfet using utc perfect trench technology to provide customers with advanced r ds(on) and low gate charge. this device has esd protection function. these complementary mosfets can be used to form a level shifted high side switch and for other applications. ? features * n-channel: 30v/6.9a r ds(on) =22.5m ? (typ.) (v gs =10v) r ds(on) =34.5m ? ((typ.) (v gs =4.5v) *p-channel: -30v/-6a r ds(on) =28m ? (typ.) (v gs =-10v ) r ds(on) =44m ? (typ.) (v gs =-4.5v) * reliable and rugged * esd protection ? symbol (2) g1 (7)(8) d1 s1 (1) s2 (3) (4) g2 (5)(6) d2 n-channel p-channel ? ordering information ordering number package pin assignment packing lead free plating halogen free 1 2 3 4 5 6 7 8 UD4606ZL-S08-R ud4606zg-s08-r sop-8 s1 g1 s2 g2 d2 d2 d1 d1 tape reel
ud4606z preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-763.a ? pin configuration
ud4606z preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-763.a ? absolute maximum ratings (t a =25c, unless otherwise specified) n-channel parameter symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v continuous drain current 2 i d 6.9 a pulsed drain current 2 i dm 30 a total power dissipation p d 2 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c p-channel parameter symbol ratings unit drain to source voltage v dss -30 v gate to source voltage v gss 20 v continuous drain current 2 i d -6 a pulsed drain current 2 i dm -30 a total power dissipation p d 2 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note:1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. surface mounted on 1in 2 pad area, t 10sec. ? thermal data parameter symbol patings unit junction to ambient (note) r ja 110 c/w note: surface mounted on 1in 2 pad area, t 10sec.
ud4606z preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-763.a ? electrical characteristics (t a =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 30 v drain-source leakage current i dss v ds =24v,v gs =0v 1 a gate-source leakage current i gss v ds =0v ,v gs =20v 5 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 1.9 3 v drain-source on-state resistance 2 r ds(on) v gs =10v,i d =6.9a 22.5 28 m ? v gs =4.5v, i d =5a 34.5 42 m ? dynamic parameters input capacitance c iss v ds =15v,v gs =0v,f =1mhz 680 pf output capacitance c oss 102 pf reverse transfer capacitance c rss 77 pf switching parameters total gate charge 2 q g v ds =15v, v gs =10v, i d =6.9a 13.8 nc gate-source charge q gs 1.82 nc gate-drain charge q gd 3.2 nc turn-on delay time 2 t d ( on ) v ds =15v, v gs =10v, r g =3 ? , r l =2.2 ? 4.6 ns turn-on rise time t r 4.1 ns turn-off delay time t d ( off ) 20.6 ns turn-off fall time t f 5.2 ns source- drain diode ratings and characteristics diode continuous forward current 3 i s 3 a drain-source diode forward voltage 2 v sd i s =6.9a, v gs =0v 0.76 1 v p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -30 v drain-source leakage current i dss v ds =-24v,v gs =0v -1 a gate-source leakage current i gss v ds =0v ,v gs =20v 5 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1.2 -2 -2.4 v drain-source on-state resistance 2 r ds(on) v gs =-10v,i d =-6a 28 35 m ? v gs =-4.5v, i d =-5a 44 58 m ? dynamic parameters input capacitance c iss v ds =-15v,v gs =0v,f =1mhz 920 pf output capacitance c oss 190 pf reverse transfer capacitance c rss 122 pf switching parameters total gate charge 2 q g v ds =-15v,v gs =-10v,i d =-6a 18.5 nc gate-source charge q gs 2.7 nc gate-drain charge q gd 4.5 nc turn-on delay time 2 t d ( on ) v ds =-15v,v gs =-10v,r g =3 ? , r l =2.7 ? 7.7 ns turn-on rise time t r 5.7 ns turn-off delay time t d ( off ) 20.2 ns turn-off fall time t f 9.5 ns
ud4606z preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-763.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics diode continuous forward current 3 i s -4.2 a drain-source diode forward voltage 2 v sd i s =-6a, v gs =0v -0.76 -1 v notes: 1. pulse width limited by t j(max) . 2. pulse width 300 s, duty cycle 2%. 3. surface mounted on 1in 2 pad area, t 10sec.
ud4606z preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-763.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
